Development of Room-Temperature Schottky Diode Technology for applications in the Tera-Hertz range - Observatoire de Paris Access content directly
Proceedings Year : 2019
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obspm-04001278 , version 1 (22-02-2023)

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  • HAL Id : obspm-04001278 , version 1

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J Treuttel, L Gatilova, J Valentin, A Maestrini, Y Jin, et al.. Development of Room-Temperature Schottky Diode Technology for applications in the Tera-Hertz range. 2019. ⟨obspm-04001278⟩
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